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| SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY AMPLIFIER B KTC815 EPITAXIAL PLANAR NPN TRANSISTOR C FEATURES Complementary to KTA539. N K D G E A Collector-Base Voltage : VCBO=60V. MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 60 45 5 200 625 150 -55 150 UNIT V M H F F DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 V V mA mW L 1 2 3 C J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Base-Emitter Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification O:70~140, ) TEST CONDITION IC=100 A, IE=0 IC=10mA, IB=0 IE=10 A, IC=0 VCB=45V, IE=0 VEB=3V, IC=0 VCE=1V, IC=50mA VCE=1V, IC=10mA IC=150mA, IB=15mA IC=150mA, IB=15mA VCE=10V, IC=10mA VCB=10V, IE=0, f=1MHz MIN. 60 45 5 70 0.6 100 TYP. 0.65 0.15 0.83 200 4 MAX. 0.1 0.1 240 0.9 0.4 1.1 V V V MHz pF UNIT V V V A A SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (Note) VBE VCE(sat) VBE(sat) fT Cob Y:120~240 2003. 3. 5 Revision No : 0 1/2 KTC815 I C - VCE COLLECTOR CURRENT I C (mA) 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 20 25 30 I B =350A h FE - I C 1K DC CURRENT GAIN h FE 500 300 VCE =1V I B =300A I B =250A I B =200A I B =150A I B =100A I B =50A 100 50 30 10 35 40 COLLECTOR-EMITTER VOLTAGE VCE (V) 1 3 5 10 30 50 100 300 500 COLLECTOR CURRENT I C (mA) VCE(sat) , V BE(sat) - I C COLLECTOR CURRENT I C (mA) 3 SATURATION VOLTAGE VCE(sat) , VBE(sat) (V) 1 0.5 0.3 0.1 0.05 0.03 0.01 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) I C =10I B VBE(sat) I C - V BE 100 VCE =1V 10 VCE(sat) 1 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 BASE EMITTER VOLTAGE VBE (V) C ob - VCB COLLECTOR OUTPUT CAPACITANCE C ob (pF) COLLECTOR POWER DISSIPATION PC (mW) 30 f=1MHz I E =0 Pc - Ta 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 10 5 3 1 1 3 5 10 30 50 COLLECTOR BASE VOLTAGE VCB (V) AMBIENT TEMPERATURE Ta ( C) 2003. 3. 5 Revision No : 0 2/2 |
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